- Series：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 15
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA | ||
|
|
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA | ||
|
|
Microchip Technology |
1,781
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
1,338
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A NONINV 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 12ns，13ns | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
2,236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
1,179
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INVERT 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
185
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
562
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
- | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
271
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
438
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
- | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
649
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INVERT 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 12ns，13ns | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
503
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
- | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 570 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 570 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A |
