Supplier Device Package:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Découvrez les produits 11
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Supplier Device Package Input Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
1EDN7550BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) PG-SOT23-6 Non-Inverting High-Side N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns -
1EDN7550BXTSA1
Infineon Technologies
2,990
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) PG-SOT23-6 Non-Inverting High-Side N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns -
1EDN7550BXTSA1
Infineon Technologies
2,990
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- PG-SOT23-6 Non-Inverting High-Side N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns -
1EDN7511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) PG-SOT23-6-2 Inverting,Non-Inverting Half-Bridge,Low-Side N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) PG-SOT23-6-2 Inverting,Non-Inverting Half-Bridge,Low-Side N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- PG-SOT23-6-2 Inverting,Non-Inverting Half-Bridge,Low-Side N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V
1EDN8550BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) PG-SOT23-6 Non-Inverting High-Side N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns -
1EDN8550BXTSA1
Infineon Technologies
2,980
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) PG-SOT23-6 Non-Inverting High-Side N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns -
1EDN8550BXTSA1
Infineon Technologies
2,980
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- PG-SOT23-6 Non-Inverting High-Side N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns -
1EDN7511BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW-SIDE SOT23-6
Tape & Reel (TR) PG-SOT23-6-2 Inverting,Non-Inverting Low-Side IGBT,N-Channel MOSFET - - 1.2V,1.9V
1EDN8511BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW-SIDE SOT23-6
Tape & Reel (TR) PG-SOT23-6-2 Inverting,Non-Inverting Half-Bridge,Low-Side N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V