- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 248
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 10WSON
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Cut Tape (CT) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 3V，8V | 1.6A，1.6A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 10WSON
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- | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 3V，8V | 1.6A，1.6A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DVR HALF-BRIDGE HV 10WSON
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 10WSON
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Cut Tape (CT) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 10WSON
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- | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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Tube | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 900 MPQ: 1
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IC DRIVER HALF-BRIDGE 16-QFN
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Tube | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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Tube | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC DRIVER HALF-BRIDGE 16-QFN
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Tube | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 980 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 8SOIC
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
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Tube | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
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IC DRIVER HALF BRIDGE 100V 12DFN
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Tube | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRDG 100V/2A 16-QFN
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
|
IC DRVR HALF BRDG 100V 8EP-SOIC
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Tube | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRVR HALF BRDG 100V 8EP-SOIC
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A |
