Supplier Device Package:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Current - Peak Output (Source, Sink):
Découvrez les produits 9
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Package / Case Supplier Device Package High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
ISL89400ABZ
Renesas Electronics America Inc.
825
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR H-BRDG 100V 1.25A 8SOIC
Tube 8-SOIC (0.154",3.90mm Width) 8-SOIC 100V 16ns,16ns 1.25A,1.25A
ISL2100AAR3Z
Renesas Electronics America Inc.
90
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRDG HF 100V 2A 9DFN
Tube 9-VFDFN Exposed Pad 9-DFN-EP (3x3) 114V 10ns,10ns 2A,2A
ISL89400AR3Z-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRVR 100V 1.25A 9-DFN
Tape & Reel (TR) 9-VFDFN Exposed Pad 9-DFN-EP (3x3) 100V 16ns,16ns 1.25A,1.25A
ISL89400ABZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR H-BRDG 100V 1.25A 8SOIC
Tape & Reel (TR) 8-SOIC (0.154",3.90mm Width) 8-SOIC 100V 16ns,16ns 1.25A,1.25A
ISL89400ABZ-TK
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRVR H-BRDG 100V 1.25A 8SOIC
Tape & Reel (TR) 8-SOIC (0.154",3.90mm Width) 8-SOIC 100V 16ns,16ns 1.25A,1.25A
ISL89400AR3Z
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR 100V 1.25A 9-DFN
Tube 9-VFDFN Exposed Pad 9-DFN-EP (3x3) 100V 16ns,16ns 1.25A,1.25A
ISL2100AAR3Z-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DVR HALF-BRDG HF 100V 2A 9DFN
Tape & Reel (TR) 9-VFDFN Exposed Pad 9-DFN-EP (3x3) 114V 10ns,10ns 2A,2A
ISL2100AABZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HALF-BRDGE HI FREQ 8SOIC
Tape & Reel (TR) 8-SOIC (0.154",3.90mm Width) 8-SOIC 114V 10ns,10ns 2A,2A
ISL2100AABZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC DVR HALF-BRDGE HI FREQ 8SOIC
Tube 8-SOIC (0.154",3.90mm Width) 8-SOIC 114V 10ns,10ns 2A,2A