- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 110
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
-40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
|
|
|
Texas Instruments |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Synchronous | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Renesas Electronics America Inc. |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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|
|
Texas Instruments |
4,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Inverting，Non-Inverting | Synchronous | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
|
|
|
Renesas Electronics America Inc. |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
-55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Texas Instruments |
4,500
|
3 jours |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DRIVER 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2V | 1.6A，1.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRDG 100V 1A 8-EMSOP
|
-40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | N-Channel MOSFET | 118V | 990ns，715ns | 2.3V，- | 1A，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 990ns，715ns | 2.3V，- | 1A，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HALF-BRIDGE HV 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 570ns，430ns | 2.3V，- | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 8SOIC
|
-40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2V | 1.6A，1.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2V | 1.6A，1.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DVR HI/LO SIDE 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 100V | 570ns，430ns | 2.3V，- | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DVR HI/LO SIDE 10WSON
|
-40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 100V | 990ns，715ns | 2.3V，- | 1A，1A |
