- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Input Type：
-
- Channel Type：
-
- Gate Type：
-
- High Side Voltage - Max (Bootstrap)：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 248
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DVR HALF-BRDG HF 100V 2A 9DFN
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DVR HALF-BRDG HF 100V 2A 9DFN
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 3.7V，7.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 980 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 100V | 16ns，16ns | 1.4V，2.2V | 1.25A，1.25A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRDG 100V/2A 16-QFN
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 16-QFN
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 12-DFN
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1200 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 16-QFN
|
Tray | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
- | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 900 MPQ: 1
|
IC DRVR HALF BRDG 100V/2A 16-QFN
|
Tube | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 12-DFN
|
Tube | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Synchronous | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDGE HI FREQ 8SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 3V，8V | 1.6A，1.6A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 600ns，600ns | 3V，8V | 1.6A，1.6A |
