- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 248
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 6000 MPQ: 1
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IC MOSFET DRVR 100V 1.25A 9-DFN
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | N-Channel MOSFET | 100V | 16ns，16ns | 1.4V，2.2V | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR 100V 1.25A 9-DFN
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | N-Channel MOSFET | 100V | 16ns，16ns | 3.7V，7.4V | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRVR H-BRDG 100V 1.25A 8SOIC
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 100V | 16ns，16ns | 3.7V，7.4V | 1.25A，1.25A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 100V | 16ns，16ns | 1.4V，2.2V | 1.25A，1.25A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DVR HALF-BRIDGE HV 8-SOIC
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 570ns，430ns | 2.3V，- | 2A，2A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 8-SOIC
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Cut Tape (CT) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 570ns，430ns | 2.3V，- | 2A，2A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 8-SOIC
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- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 118V | 570ns，430ns | 2.3V，- | 2A，2A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 4500 MPQ: 1
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IC DVR HALF-BRIDGE HV 10WSON
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DVR HALF-BRIDGE HV 8SOPWRPAD
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 4500 MPQ: 1
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IC DVR HALF-BRIDGE HV 8WSON
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 100V | 16ns，16ns | 3.7V，7.4V | 1.25A，1.25A | ||
|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 100V | 16ns，16ns | 1.4V，2.2V | 1.25A，1.25A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER HALF-BRIDGE HV 10WSON
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 570ns，430ns | 2.3V，- | 2A，2A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE HV 10WSON
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Cut Tape (CT) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 570ns，430ns | 2.3V，- | 2A，2A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE HV 10WSON
|
- | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 118V | 570ns，430ns | 2.3V，- | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR 100V 1.25A 9-DFN
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Tube | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | N-Channel MOSFET | 100V | 16ns，16ns | 3.7V，7.4V | 1.25A，1.25A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE HV 8SOPWR
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DVR HI/LO SIDE 2A 8SOIC
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 100V | 570ns，430ns | 2.3V，- | 2A，2A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 4500 MPQ: 1
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IC GATE DVR HI/LO SIDE 10WSON
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDGE HI FREQ 8SOIC
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A |
