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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 129
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Microchip Technology |
211
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | |||
|
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Microchip Technology |
951
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
633
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
860
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 4.5A 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 9.5ns，9ns | 0.8V，2V | |||
|
|
Microchip Technology |
470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
336
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
70
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
52
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 4.5A 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 9.5ns，9ns | 0.8V，2V | |||
|
|
Microchip Technology |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 4.5A 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 9.5ns，9ns | 0.8V，2V | |||
|
|
Microchip Technology |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 4.5A 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 9.5ns，9ns | 0.8V，2V | |||
|
|
Microchip Technology |
595
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
290
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
256
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V |
