- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 43
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 14-SOP
|
- | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 8-SOP
|
- | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER HI LOW SIDE 14SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8-SOIC
|
- | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | ||||
Microchip Technology |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Inverting,Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER 4.5A 8WDFN
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-WFDFN Exposed Pad | 8-WDFN (2x2) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 9.5ns,9ns | 0.8V,2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Inverting,Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 12ns,12ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 4.5A DUAL 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8SOIC
|
Automotive,AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V |