- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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Découvrez les produits 49
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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|
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ON Semiconductor |
2,657
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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|
|
ON Semiconductor |
2,657
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 8-SOP
|
- | - | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 0.8V，2.5V | ||
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|
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Diodes Incorporated |
2,297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 0.8V，2.5V | ||
|
|
|
Diodes Incorporated |
2,297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 0.8V，2.5V | ||
|
|
|
ON Semiconductor |
39
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8SOIC
|
- | Automotive，AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 8100 MPQ: 1
|
IC GATE DRIVER HI LOW SIDE 8-SOP
|
Tube | - | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 4750 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8-SOIC
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Tube | Automotive，AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
|
|
Microchip Technology |
3,548
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting，Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,278
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting，Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,278
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting，Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V |
