- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Mounting Type:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Conditions sélectionnées:
Découvrez les produits 129
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4750 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8-SOIC
|
Tube | Automotive,AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | ||||
Microchip Technology |
3,548
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | ||||
Microchip Technology |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | ||||
Microchip Technology |
297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | ||||
Microchip Technology |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED,HIGH -SPEED,LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns,12ns | 0.8V,2V | ||||
Microchip Technology |
267
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V |