Fabricant:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 71
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IXDD430MCI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
IXDI409CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO220-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDI414CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER MOSF/IGBT 14A TO-220-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,20ns 14A,14A
IXDI430CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
IXDI430MCI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
IXDN409CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO220-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDN414CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER MOSF/IGBT 14A TO-220-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,20ns 14A,14A
IXDN430CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Tube - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
IXDN430MCI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
DEIC421
IXYS
Enquête
-
-
MOQ: 30  MPQ: 1
RF MOSFET DRIVER 20 AMP
Bulk - 8 V ~ 30 V -40°C ~ 150°C (TJ) 7-SMD,Flat Lead DE275 Surface Mount Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 3ns,3ns 20A,20A
IPN10ELSXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14SSOP
Tape & Reel (TR) Automotive 4 V ~ 40 V -40°C ~ 150°C (TJ) 14-LSSOP (0.154",3.90mm Width) Exposed Pad PG-SSOP-14 Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel,P-Channel MOSFET - 380ns,380ns 400mA,400mA