- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Mounting Type:
-
- Rise / Fall Time (Typ):
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 18
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
695
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR LS 9A 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 10ns,10ns | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 10ns,10ns | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE TO263-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 10ns,10ns | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRIVER MOSF/IGBT 14A 8-DIP
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 22ns,20ns | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRIVER MOSF/IGBT 14A 14-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 22ns,20ns | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRIVER MOSF/IGBT 14A TO263-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 22ns,20ns | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC MOSFET DVR 9A INV 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | IGBT,N-Channel,P-Channel MOSFET | 10ns,10ns | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE TO220-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 10ns,10ns | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRIVER MOSF/IGBT 14A TO-220-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 22ns,20ns | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO220-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO220-5
|
Bulk | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 30 MPQ: 1
|
RF MOSFET DRIVER 20 AMP
|
Bulk | 8 V ~ 30 V | -40°C ~ 150°C (TJ) | 7-SMD,Flat Lead | DE275 | Surface Mount | N-Channel,P-Channel MOSFET | 3ns,3ns | 20A,20A |