- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 4
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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MOQ: 2500 MPQ: 1
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IC DVR HI/LOW SIDE 600V 14SOIC
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 30ns，20ns | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DVR HI SIDE DUAL 600V 16SOIC
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | High-Side | IGBT，N-Channel MOSFET | 600V | 60ns，20ns | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR HI/LOW SIDE 600V 20SOIC
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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MOQ: 2500 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 14SSOP
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Automotive | 4 V ~ 40 V | -40°C ~ 150°C (TJ) | 14-LSSOP (0.154"，3.90mm Width) Exposed Pad | PG-SSOP-14 | Half-Bridge | N-Channel，P-Channel MOSFET | - | 380ns，380ns | 400mA，400mA |
