- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 71
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRIVER MOSF/IGBT 14A 5-TO-263
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，20ns | 14A，14A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRVR MOSF/IGBT 30A TO263-5
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Tube | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 30A，30A | ||
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IXYS |
Enquête
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-
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MOQ: 27 MPQ: 1
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IC DRVR MOSF/IGBT 30A 28-SOIC
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Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 30A，30A | ||
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IXYS |
Enquête
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-
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MOQ: 94 MPQ: 1
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IC MOSFET DVR 9A INV 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 9A，9A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 330 MPQ: 1
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IC DVR LOW SIDE/DUAL HI 14-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 30ns，20ns | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC DVR LOW SIDE/DUAL HI 16-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，20ns | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 216 MPQ: 1
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IC DVR HI SIDE/DUAL LOW 20-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DVR HI/LOW SIDE 600V 14SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 30ns，20ns | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DVR HI SIDE DUAL 600V 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，20ns | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR HI/LOW SIDE 600V 20SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 500mA，500mA | ||
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IXYS-RF |
111
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3 jours |
-
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MOQ: 1 MPQ: 1
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IXZ631DF12N100 1000V 12A INTEGRA
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Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 10-SMD，Flat Lead | 10-SMD | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 1000V | 2.4ns，1.55ns | 72A，72A | |||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 30A，30A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR LS 8A SGL 5TO-220
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Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 8A，8A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRV LS 14A SGL 5TO-220
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE TO220-5
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRVR MOSF/IGBT 30A TO220-5
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Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 30A，30A |
