Fabricant:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 71
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IXDN414SI
IXYS
Enquête
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MOQ: 94  MPQ: 1
IC DRIVER MOSF/IGBT 14A14SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,20ns 14A,14A
IXDI409SI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR LS 9A 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDD409PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-DIP
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDD409SI
IXYS
Enquête
-
-
MOQ: 94  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDD414SI
IXYS
Enquête
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-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 14A LOSIDE 14SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,22ns 14A,14A
IXDD415SI
IXYS
Enquête
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-
MOQ: 27  MPQ: 1
IC MOSFET DRVR DUAL 15A 28-SOIC
Tube - 8 V ~ 30 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 4.5ns,3.5ns 15A,15A
IXDD430MYI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
IXDD430YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
IXDI409PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-DIP
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDI409YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO263-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDI414PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER MOSF/IGBT 14A 8-DIP
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,20ns 14A,14A
IXDI414SI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER MOSF/IGBT 14A 14-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,20ns 14A,14A
IXDI414YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER MOSF/IGBT 14A TO263-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,20ns 14A,14A
IXDI430MYI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
IXDI430YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 30A,30A
IXDN409PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-DIP
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDN409SI
IXYS
Enquête
-
-
MOQ: 94  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDN409SIA
IXYS
Enquête
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-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDN409YI
IXYS
Enquête
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-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO263-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 9A,9A
IXDN414PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRIVER MOSF/IGBT 14A 8-DIP
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,20ns 14A,14A