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Découvrez les produits 399
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
W9751G6KB-25 TR
Winbond Electronics
3,259
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84WBGA
- - 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-WBGA (8x12.5) 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
W971GG6SB-25 TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 1G PARALLEL 84WBGA
Tape & Reel (TR) - 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-WBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 200MHz 400ps Parallel 15ns
W971GG6SB-25 TR
Winbond Electronics
2,300
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84WBGA
Cut Tape (CT) - 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-WBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 200MHz 400ps Parallel 15ns
W971GG6SB-25 TR
Winbond Electronics
2,300
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84WBGA
- - 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-WBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 200MHz 400ps Parallel 15ns
IS43DR16128B-25EBL
ISSI,Integrated Silicon Solution Inc
137
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84TWBGA
Tray - 1.7 V ~ 1.9 V 0°C ~ 85°C (TA) 84-TWBGA (10.5x13) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E IT:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Tape & Reel (TR) - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E IT:C TR
Micron Technology Inc.
353
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Cut Tape (CT) - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E IT:C TR
Micron Technology Inc.
353
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
- - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E XIT:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Tape & Reel (TR) - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E XIT:C TR
Micron Technology Inc.
900
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Cut Tape (CT) - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E XIT:C TR
Micron Technology Inc.
900
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
- - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E AIT:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Tape & Reel (TR) - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E AIT:C TR
Micron Technology Inc.
985
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Cut Tape (CT) - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E AIT:C TR
Micron Technology Inc.
985
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
- - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E AAT:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Tape & Reel (TR) - 1.7 V ~ 1.9 V -40°C ~ 105°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E AAT:C TR
Micron Technology Inc.
608
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Cut Tape (CT) - 1.7 V ~ 1.9 V -40°C ~ 105°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E AAT:C TR
Micron Technology Inc.
608
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
- - 1.7 V ~ 1.9 V -40°C ~ 105°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
AS4C128M16D2A-25BIN
Alliance Memory,Inc.
45
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
Tray - 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (10.5x13.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz - Parallel 15ns
W972GG6KB-25
Winbond Electronics
38
3 jours
-
MOQ: 1  MPQ: 1
IC DDR2 SDRAM 2GBIT 2.5NS 84BGA
Tray - - - 84-WBGA (8x12.5) - - - - - - - -
W9712G6KB-25
Winbond Electronics
193
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 84TFBGA
Tray - 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-TFBGA (8x12.5) 128Mb (8M x 16) Volatile SDRAM - DDR2 DRAM 200MHz 400ps Parallel 15ns