- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Access Time：
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- Conditions sélectionnées:
Découvrez les produits 120
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Access Time | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Access Time | |
|
|
|
ISSI，Integrated Silicon Solution Inc |
1,340
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | 450ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
472
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
221
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 450ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | 450ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
198
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-TWBGA (8x12.5) | 2Gb (128M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
7
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 450ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
23
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 2Gb (128M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 627 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 418 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 209 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 333MHZ
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-WBGA (8x12.5) | 512Mb (32M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 450ps | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 333MHZ
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 450ps |
