Découvrez les produits 158
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Supplier Device Package Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
W9751G6KB-25
Winbond Electronics
20,933
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84WBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-WBGA (8x12.5) 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
AS4C128M16D2-25BIN
Alliance Memory,Inc.
331
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
- 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (10.5x13.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz - Parallel 15ns
MT47H128M16RT-25E:C
Micron Technology Inc.
1,247
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H128M16RT-25E IT:C
Micron Technology Inc.
4,868
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
- 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (9x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
W9725G6KB-25
Winbond Electronics
3,533
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 84WBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-WBGA (8x12.5) 256Mb (16M x 16) Volatile SDRAM - DDR2 DRAM 200MHz 400ps Parallel 15ns
W9751G6KB25I
Winbond Electronics
700
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84WBGA
- 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-WBGA (8x12.5) 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
W971GG6SB-25
Winbond Electronics
838
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84WBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-WBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 200MHz 400ps Parallel 15ns
IS43DR16640C-25DBL
ISSI,Integrated Silicon Solution Inc
1,149
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84TWBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-TWBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ns Parallel 15ns
AS4C32M16D2A-25BIN
Alliance Memory,Inc.
444
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
- 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-FBGA (8x12.5) 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
IS43DR16640B-25DBL
ISSI,Integrated Silicon Solution Inc
615
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84WBGA
- 1.7 V ~ 1.9 V 0°C ~ 70°C (TA) 84-WBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
W971GG6SB25I
Winbond Electronics
812
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84WBGA
- 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-WBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 200MHz 400ps Parallel 15ns
IS43DR16640C-3DBLI
ISSI,Integrated Silicon Solution Inc
1,340
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84TWBGA
- 1.7 V ~ 1.9 V -40°C ~ 85°C (TA) 84-TWBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 333MHz 450ns Parallel 15ns
IS43DR16640B-25DBLI
ISSI,Integrated Silicon Solution Inc
635
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84WBGA
- 1.7 V ~ 1.9 V -40°C ~ 85°C (TA) 84-WBGA (8x12.5) 1Gb (64M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
AS4C128M16D2A-25BCN
Alliance Memory,Inc.
257
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84FBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-FBGA (10.5x13.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz - Parallel 15ns
IS43DR16128C-25DBLI
ISSI,Integrated Silicon Solution Inc
172
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84TWBGA
- 1.7 V ~ 1.9 V -40°C ~ 85°C (TA) 84-TWBGA (8x12.5) 2Gb (128M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ns Parallel 15ns
IS43DR16160B-37CBL
ISSI,Integrated Silicon Solution Inc
248
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 84TWBGA
- 1.7 V ~ 1.9 V 0°C ~ 70°C (TA) 84-TWBGA (8x12.5) 256Mb (16M x 16) Volatile SDRAM - DDR2 DRAM 266MHz 500ps Parallel 15ns
AS4C32M16D2A-25BCN
Alliance Memory,Inc.
1,161
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
- 1.7 V ~ 1.9 V 0°C ~ 95°C (TC) 84-FBGA (8x12.5) 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
IS43DR16320C-3DBL
ISSI,Integrated Silicon Solution Inc
472
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84TWBGA
- 1.7 V ~ 1.9 V 0°C ~ 70°C (TA) 84-TWBGA (8x12.5) 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 333MHz 450ps Parallel 15ns
AS4C32M16D2A-25BAN
Alliance Memory,Inc.
1,067
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
- 1.7 V ~ 1.9 V -40°C ~ 105°C (TC) 84-FBGA (8x12.5) 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
AS4C16M16D2-25BCN
Alliance Memory,Inc.
151
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 84TFBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-TFBGA (12.5x8) 256Mb (16M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns