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Découvrez les produits 158
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
Winbond Electronics |
20,933
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84WBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-WBGA (8x12.5) | 512Mb (32M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
Alliance Memory,Inc. |
331
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84FBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | 84-FBGA (10.5x13.5) | 2Gb (128M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | - | Parallel | 15ns | ||||
Micron Technology Inc. |
1,247
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84FBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-FBGA (9x12.5) | 2Gb (128M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
Micron Technology Inc. |
4,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84FBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | 84-FBGA (9x12.5) | 2Gb (128M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
Winbond Electronics |
3,533
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 84WBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-WBGA (8x12.5) | 256Mb (16M x 16) | Volatile | SDRAM - DDR2 | DRAM | 200MHz | 400ps | Parallel | 15ns | ||||
Winbond Electronics |
700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84WBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | 84-WBGA (8x12.5) | 512Mb (32M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
Winbond Electronics |
838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84WBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-WBGA (8x12.5) | 1Gb (64M x 16) | Volatile | SDRAM - DDR2 | DRAM | 200MHz | 400ps | Parallel | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
1,149
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ns | Parallel | 15ns | ||||
Alliance Memory,Inc. |
444
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84FBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | 84-FBGA (8x12.5) | 512Mb (32M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84WBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-WBGA (8x12.5) | 1Gb (64M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
Winbond Electronics |
812
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84WBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | 84-WBGA (8x12.5) | 1Gb (64M x 16) | Volatile | SDRAM - DDR2 | DRAM | 200MHz | 400ps | Parallel | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
1,340
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ns | Parallel | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84WBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-WBGA (8x12.5) | 1Gb (64M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
Alliance Memory,Inc. |
257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84FBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-FBGA (10.5x13.5) | 2Gb (128M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | - | Parallel | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
172
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TWBGA (8x12.5) | 2Gb (128M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ns | Parallel | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
248
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | Volatile | SDRAM - DDR2 | DRAM | 266MHz | 500ps | Parallel | 15ns | ||||
Alliance Memory,Inc. |
1,161
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84FBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 95°C (TC) | 84-FBGA (8x12.5) | 512Mb (32M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
ISSI,Integrated Silicon Solution Inc |
472
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | Parallel | 15ns | ||||
Alliance Memory,Inc. |
1,067
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84FBGA
|
- | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TC) | 84-FBGA (8x12.5) | 512Mb (32M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns | ||||
Alliance Memory,Inc. |
151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 84TFBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-TFBGA (12.5x8) | 256Mb (16M x 16) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | Parallel | 15ns |