SI4900DY-T1-E3

Current - Continuous Drain (Id) @ 25°C :

5.3A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154"，3.90mm Width)

Packaging :

Cut Tape (CT)

Power - Max :

3.1W

Rds On (Max) @ Id，Vgs :

58 mOhm @ 4.3A，10V

Series :

TrenchFET

Supplier Device Package :

8-SO

Vgs(th) (Max) @ Id :

3V @ 250μA