- Voltage - Supply:
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- Package / Case:
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- Frequency:
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- Noise Figure:
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- RF Type:
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- Test Frequency:
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- Conditions sélectionnées:
Découvrez les produits 6
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Package / Case | Frequency | Current - Supply | Gain | Noise Figure | P1dB | RF Type | Test Frequency | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Package / Case | Frequency | Current - Supply | Gain | Noise Figure | P1dB | RF Type | Test Frequency | ||
NXP USA Inc. |
2,163
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC AMP HBT INGAP CLASS AB 12QFN
|
3 V ~ 5 V | 12-VFQFN Exposed Pad | 400MHz ~ 1GHz | 74mA | 31.7dB | 4dB | 29.6dBm | CDMA,GSM | 900MHz | ||||
NXP USA Inc. |
1,156
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC AMP HBT INGAP
|
5V | 12-VFQFN Exposed Pad | 130MHz ~ 1GHz | 240mA | 31dB | - | 32dBm | LTE,TDS-CDMA,W-CDMA | 1GHz | ||||
NXP USA Inc. |
1,105
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC AMP HBT INGAP 12QFN
|
3 V ~ 5 V | 12-VFQFN Exposed Pad | 1.8GHz ~ 2.8GHz | 390mA | 26.5dB | 5.8dB | 33dBm | LTE,TDS-CDMA,W-CDMA | 2.5GHz | ||||
Microwave Technology Inc. |
866
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MMIC GAAS AMP 6-22GHZ 12QFN
|
3 V ~ 6 V | 12-WFQFN Exposed Pad | 6GHz ~ 20GHz | 130mA | 14dB | - | 18.5dBm | ISM | - | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC AMP HBT INGAP/GAAS 12-QFN
|
5V | 12-VFQFN Exposed Pad | 1.8GHz ~ 2.2GHz | 70mA | 27.2dB | 3.3dB | 28.2dBm | LTE,PCS,TD-SCDMA,UMTS | 2.14GHz | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC W/NOISE AMPLIFIER BASE 12-QFN
|
2.7 V ~ 3 V | 12-VFQFN Exposed Pad | 800MHz ~ 2.5GHz | 2.8mA | 18dB | 1.25dB | -10dBm | Cellular,ISM,PCS,GPS | 1.575GHz |