Découvrez les produits 37
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Frequency Current - Supply Gain Noise Figure P1dB RF Type Test Frequency
MMZ09312BT1
NXP USA Inc.
2,000
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP CLASS AB 12QFN
Tape & Reel (TR) 3 V ~ 5 V 12-VFQFN Exposed Pad 400MHz ~ 1GHz 74mA 31.7dB 4dB 29.6dBm CDMA,GSM 900MHz
MMZ09312BT1
NXP USA Inc.
2,163
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP CLASS AB 12QFN
Cut Tape (CT) 3 V ~ 5 V 12-VFQFN Exposed Pad 400MHz ~ 1GHz 74mA 31.7dB 4dB 29.6dBm CDMA,GSM 900MHz
MMZ09312BT1
NXP USA Inc.
2,163
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP CLASS AB 12QFN
- 3 V ~ 5 V 12-VFQFN Exposed Pad 400MHz ~ 1GHz 74mA 31.7dB 4dB 29.6dBm CDMA,GSM 900MHz
MMZ09332BT1
NXP USA Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP
Tape & Reel (TR) 5V 12-VFQFN Exposed Pad 130MHz ~ 1GHz 240mA 31dB - 32dBm LTE,TDS-CDMA,W-CDMA 1GHz
MMZ09332BT1
NXP USA Inc.
1,156
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP
Cut Tape (CT) 5V 12-VFQFN Exposed Pad 130MHz ~ 1GHz 240mA 31dB - 32dBm LTE,TDS-CDMA,W-CDMA 1GHz
MMZ09332BT1
NXP USA Inc.
1,156
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP
- 5V 12-VFQFN Exposed Pad 130MHz ~ 1GHz 240mA 31dB - 32dBm LTE,TDS-CDMA,W-CDMA 1GHz
MMZ25332BT1
NXP USA Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP 12QFN
Tape & Reel (TR) 3 V ~ 5 V 12-VFQFN Exposed Pad 1.8GHz ~ 2.8GHz 390mA 26.5dB 5.8dB 33dBm LTE,TDS-CDMA,W-CDMA 2.5GHz
MMZ25332BT1
NXP USA Inc.
1,105
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP 12QFN
Cut Tape (CT) 3 V ~ 5 V 12-VFQFN Exposed Pad 1.8GHz ~ 2.8GHz 390mA 26.5dB 5.8dB 33dBm LTE,TDS-CDMA,W-CDMA 2.5GHz
MMZ25332BT1
NXP USA Inc.
1,105
3 jours
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP 12QFN
- 3 V ~ 5 V 12-VFQFN Exposed Pad 1.8GHz ~ 2.8GHz 390mA 26.5dB 5.8dB 33dBm LTE,TDS-CDMA,W-CDMA 2.5GHz
MMA-062020-C3
Microwave Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
MMIC GAAS AMP 6-22GHZ 12QFN
Tape & Reel (TR) 3 V ~ 6 V 12-WFQFN Exposed Pad 6GHz ~ 20GHz 130mA 14dB - 18.5dBm ISM -
MMA-062020-C3
Microwave Technology Inc.
866
3 jours
-
MOQ: 1  MPQ: 1
MMIC GAAS AMP 6-22GHZ 12QFN
Cut Tape (CT) 3 V ~ 6 V 12-WFQFN Exposed Pad 6GHz ~ 20GHz 130mA 14dB - 18.5dBm ISM -
MMA-062020-C3
Microwave Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
MMIC GAAS AMP 6-22GHZ 12QFN
- 3 V ~ 6 V 12-WFQFN Exposed Pad 6GHz ~ 20GHz 130mA 14dB - 18.5dBm ISM -
HMC3653LP3BE
Analog Devices Inc.
33
3 jours
-
MOQ: 1  MPQ: 1
IC MMIC AMP HBT GAIN 12SMD
Cut Strip 5V 12-VFQFN Exposed Pad 7GHz ~ 15GHz 40mA 15dB 4dB 15dBm General Purpose -
MMA20312BT1
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP/GAAS 12-QFN
Tape & Reel (TR) 5V 12-VFQFN Exposed Pad 1.8GHz ~ 2.2GHz 70mA 27.2dB 3.3dB 28.2dBm LTE,PCS,TD-SCDMA,UMTS 2.14GHz
MMA20312BT1
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP/GAAS 12-QFN
Cut Tape (CT) 5V 12-VFQFN Exposed Pad 1.8GHz ~ 2.2GHz 70mA 27.2dB 3.3dB 28.2dBm LTE,PCS,TD-SCDMA,UMTS 2.14GHz
MMA20312BT1
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP/GAAS 12-QFN
- 5V 12-VFQFN Exposed Pad 1.8GHz ~ 2.2GHz 70mA 27.2dB 3.3dB 28.2dBm LTE,PCS,TD-SCDMA,UMTS 2.14GHz
MML09212HT1
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC LNA AMP E-PHEMT 12QFN
Tape & Reel (TR) 5V 12-VFQFN Exposed Pad 400MHz ~ 1.4GHz 150mA 37.5dB 0.52dB 22.8dBm GSM,LTE,W-CDMA 900MHz
MMA20312BVT1
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP/GAAS 12QFN
Tape & Reel (TR) 5V 12-VFQFN Exposed Pad 1.8GHz ~ 2.2GHz 70mA 27.2dB 3.3dB 28.2dBm LTE,PCS,TD-SCDMA,UMTS 2.14GHz
MMA25312BT1
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC AMP HBT INGAP 12QFN
Tape & Reel (TR) 3 V ~ 5 V 12-VFQFN Exposed Pad 2.3GHz ~ 2.7GHz 124mA 26dB 3.8dB 31dBm WiMax,WLAN 2.5GHz
MC13770FCR2
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC RF LN AMP W-CDMA QFN-12
Tape & Reel (TR) 2.7 V ~ 3 V 12-VFQFN Exposed Pad 2.1GHz ~ 2.4GHz 8mA 15dB 1.5dB - W-CDMA 2.14GHz