- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 5
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
|
IC DVR HIGH SIDE 600V 8SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | - | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
|
MOQ: 380 MPQ: 1
|
IC DVR HIGH SIDE 600V 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | - | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 475 MPQ: 1
|
IC DRIVER HIGH SIDE 600V 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | - | 500mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRIVER HIGH SIDE 600V 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | - | 500mA，500mA | ||
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NXP USA Inc. |
Enquête
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-
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MOQ: 38 MPQ: 1
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IC H-BRIDGE PRE-DRIVER 20-SOIC
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- | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 0.8V，2V | 1A，1A |
