- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 173
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
ON Semiconductor |
14,435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 3A，3A | |||
|
|
ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 3A，3A | |||
|
|
ON Semiconductor |
11,940
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 3A，3A | |||
|
|
ON Semiconductor |
11,940
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 3A，3A | |||
|
|
ON Semiconductor |
17,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
19,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
19,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 5A，5A | |||
|
|
ON Semiconductor |
3,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 5A，5A | |||
|
|
ON Semiconductor |
3,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 5A，5A | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
3,513
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
3,513
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A | |||
|
|
Monolithic Power Systems Inc. |
2,000
|
3 jours |
-
|
MOQ: 500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 100V | 1V，2.4V | 2.5A，2.5A | |||
|
|
Monolithic Power Systems Inc. |
2,282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 100V | 1V，2.4V | 2.5A，2.5A | |||
|
|
Monolithic Power Systems Inc. |
2,282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 100V | 1V，2.4V | 2.5A，2.5A | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V，2V | 5A，5A |
