- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
-
- Driven Configuration:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 119
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 3A,3A | ||||
ON Semiconductor |
1,591
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 3A,3A | ||||
ON Semiconductor |
1,591
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC BRIDGE DVR P/N-CH 2A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P/N-CH 2A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P/N-CH 2A 8SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting | Synchronous | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting | Synchronous | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting | Synchronous | Low-Side | N-Channel MOSFET | - | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
- | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 3A,3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | - | 3A,3A |