- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 371
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
513
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
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Tube | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
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Microchip Technology |
163
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8DIP
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 3A，3A | |||
|
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Microchip Technology |
764
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 3A，3A | |||
|
|
Microchip Technology |
111
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A TO220-5
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
477
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8DIP
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 3A，3A | |||
|
|
Microchip Technology |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A TO220-5
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | TO-220-5 | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
833
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Tube | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Tape & Reel (TR) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Cut Tape (CT) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER MOSFET 85V 10-DFN
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V，2.2V | 1.5A，1A | |||
|
|
Microchip Technology |
435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 85V 10-DFN
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V，2.2V | 1.5A，1A | |||
|
|
Microchip Technology |
435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 85V 10-DFN
|
- | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V，2.2V | 1.5A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Tape & Reel (TR) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
426
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Cut Tape (CT) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
426
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Tape & Reel (TR) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
15
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Cut Tape (CT) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 6A，6A |
