- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 114
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | - | ||||
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | - | ||||
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | - | ||||
Renesas Electronics America Inc. |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | - | ||||
Maxim Integrated |
363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
9,183
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 1.1V,2.7V | 9A,9A | ||||
Maxim Integrated |
628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
506
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
4,175
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 1.1V,2.7V | 9A,9A | ||||
Maxim Integrated |
332
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V,2V | - | ||||
Texas Instruments |
3,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 1.1V,2.7V | 9A,9A | ||||
Maxim Integrated |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
3,907
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 1.1V,2.7V | 9A,9A | ||||
Maxim Integrated |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V,2V | - | ||||
Maxim Integrated |
140
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 9A SGL HS 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
1,054
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A SGL HS 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
1,054
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A SGL HS 8SOIC
|
- | Automotive,AEC-Q100 | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 9A SGL HS 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 1.1V,2.7V | 9A,9A |