Fabricant:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 66
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LM5106MM
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE HV 10-MSOP
- - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-VSSOP Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.2A,1.8A
LM5106SD
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.2A,1.8A
LM5106SD
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.2A,1.8A
LM5106SD
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
- - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.2A,1.8A
IR25600PBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DUAL MOSFET IGBT 8-DIP
Tube - 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 IGBT,N-Channel MOSFET - 0.8V,2.7V 2.3A,3.3A
FAN7081CMX_F085
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER HIGH SIDE 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V - 250mA,500mA