- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 22
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
240,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.7V | 2.3A,3.3A | ||||
Texas Instruments |
49,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V,2.2V | 1.2A,1.8A | ||||
Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) | 10-VSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V,2.2V | 1.2A,1.8A | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 0.7V,4V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC LOW SIDE IGBT DRIVER 8SOIC
|
- | 25V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 0.8V,2V | 1.5A,2A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) | 10-VSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V,2.2V | 1.2A,1.8A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V,2.2V | 1.2A,1.8A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 1.2V,2.2V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | - | 250mA,500mA | ||||
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 1.2V,2.2V | 2.5A,2.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL MOSFET IGBT 8SO
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.7V | 2.3A,3.3A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 0.7V,4V | - | ||||
Semtech Corporation |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR COMBISENSE 20TSSOP
|
Combi-Sense | 9 V ~ 15 V | 0°C ~ 150°C (TJ) | 20-TSSOP (0.173",4.40mm Width) | 20-TSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 40V | 0.8V,2V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8-SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8-SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8-SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8-SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.7V | 2.3A,3.3A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) | 10-VSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V,2.2V | 1.2A,1.8A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V,2.2V | 1.2A,1.8A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) | 10-VSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V,2.2V | 1.2A,1.8A |