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Découvrez les produits 74
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2ED020I12FIXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC IGBT DRIVER DUAL PDSO18
Cut Tape (CT) - 14 V ~ 18 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width),18 Leads PG-DSO-18-2 Surface Mount Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 20ns,20ns 0.8V,2V 1A,2A
2ED020I12FIXUMA1
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC IGBT DRIVER DUAL PDSO18
- - 14 V ~ 18 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width),18 Leads PG-DSO-18-2 Surface Mount Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 20ns,20ns 0.8V,2V 1A,2A
IR2233JPBF
Infineon Technologies
6
3 jours
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MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3PHASE 44PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2233PBF
Infineon Technologies
10
3 jours
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MOQ: 1  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 28-DIP
Tube - 10 V ~ 20 V 125°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IX2120BTR
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
1200V HIGH AND LOW SIDE GATE DRI
Tape & Reel (TR) - 15 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 9.4ns,9.7ns 6V,9.5V 2A,2A
IX2120BTR
IXYS Integrated Circuits Division
Enquête
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MOQ: 1  MPQ: 1
1200V HIGH AND LOW SIDE GATE DRI
Cut Tape (CT) - 15 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 9.4ns,9.7ns 6V,9.5V 2A,2A
IX2120BTR
IXYS Integrated Circuits Division
Enquête
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MOQ: 1  MPQ: 1
1200V HIGH AND LOW SIDE GATE DRI
- - 15 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 9.4ns,9.7ns 6V,9.5V 2A,2A
IX2120B
IXYS Integrated Circuits Division
Enquête
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MOQ: 980  MPQ: 1
1200V HIGH AND LOW SIDE GATE DRI
Tube - 15 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 9.4ns,9.7ns 6V,9.5V 2A,2A
IR2233SPBF
Infineon Technologies
Enquête
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MOQ: 2000  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Tube - 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2233STRPBF
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER 3PHASE 28-SOIC
Tape & Reel (TR) - 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2235JPBF
Infineon Technologies
Enquête
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MOQ: 1134  MPQ: 1
IC DRIVER BRIDGE 3PHASE 44PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2235SPBF
Infineon Technologies
Enquête
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MOQ: 2000  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 28-SOIC
Tube - 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2235STRPBF
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Tape & Reel (TR) - 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2233J
Infineon Technologies
Enquête
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MOQ: 27  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 44-PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2213
Infineon Technologies
Enquête
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MOQ: 100  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-DIP
Tube - 12 V ~ 20 V -55°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2.5A
IR2213S
Infineon Technologies
Enquête
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MOQ: 90  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Tube - 12 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2.5A
IR2233
Infineon Technologies
Enquête
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MOQ: 13  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 28-DIP
Tube - 10 V ~ 20 V 125°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2233S
Infineon Technologies
Enquête
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MOQ: 25  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 28-SOIC
Tube - 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2235
Infineon Technologies
Enquête
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MOQ: 13  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 28-DIP
Tube - 10 V ~ 20 V 125°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2235J
Infineon Technologies
Enquête
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MOQ: 27  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 44-PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA