Découvrez les produits 16
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
1EBN1001AEXUMA1
Infineon Technologies
2,500
3 jours
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MOQ: 2500  MPQ: 1
IC IGBT DVR 1200V DSO14
Automotive,AEC-Q100,EiceDriver 13 V ~ 18 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) PG-DSO-14 - Single High-Side or Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 50ns,90ns 1.5V,3.5V -
IR2214SSTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DVR HALF BRIDGE IC 24SSOP
- 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 24-SSOP (0.209",5.30mm Width) 24-SSOP Non-Inverting Independent Half-Bridge 2 IGBT 24ns,7ns 0.8V,2V 2A,3A
2ED020I12F2XUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER IGBT DSO36
EiceDriver 13 V ~ 20 V -40°C ~ 150°C (TJ) 36-BSSOP (0.295",7.50mm Width),32 Leads PG-DSO-36-58 Inverting,Non-Inverting Independent Half-Bridge 2 IGBT 30ns,50ns 1.5V,3.5V 2A,2A
IR2233JTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 500  MPQ: 1
IC DRIVER BRIDGE 3PHASE 44PLCC
- 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
2ED020I12FAXUMA2
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER IGBT DSO36
EiceDriver 13 V ~ 20 V -40°C ~ 150°C (TJ) 36-BSSOP (0.295",7.50mm Width),32 Leads PG-DSO-36-58 Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 30ns,50ns 1.5V,3.5V 2.4A,2.4A
IR2235JTRPBF
Infineon Technologies
Enquête
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-
MOQ: 500  MPQ: 1
IC DRIVER BRIDGE 3PHASE 44PLCC
- 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
FAN73912MX
ON Semiconductor
Enquête
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MOQ: 1000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SOIC
- 12 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC - Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 25ns,15ns 6V,9.5V 2A,3A
IR2213STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1000  MPQ: 1
IC DVR HI/LO SIDE 16-SOIC
- 12 V ~ 20 V 125°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2.5A
2ED020I12FIXUMA1
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC IGBT DRIVER DUAL PDSO18
- 14 V ~ 18 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width),18 Leads PG-DSO-18-2 Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 20ns,20ns 0.8V,2V 1A,2A
IX2120BTR
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
1200V HIGH AND LOW SIDE GATE DRI
- 15 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 9.4ns,9.7ns 6V,9.5V 2A,2A
IR2233STRPBF
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER 3PHASE 28-SOIC
- 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2235STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1000  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
- 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2233JTR
Infineon Technologies
Enquête
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MOQ: 500  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 44-PLCC
- 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
IR2235JTR
Infineon Technologies
Enquête
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-
MOQ: 500  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 44-PLCC
- 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 90ns,40ns 0.8V,2V 250mA,500mA
2ED020I12-F
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER IGBT 2-CHAN PDSO-18-1
- 0 V ~ 18 V - 20-SOIC (0.295",7.50mm Width),18 Leads PG-DSO-18-2 Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET - - 1A,2A
IR22141SSTRPBF
Infineon Technologies
Enquête
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MOQ: 2000  MPQ: 1
IC DVR HALF BRIDGE IC 24SSOP
- 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 24-SSOP (0.209",5.30mm Width) 24-SSOP Non-Inverting Independent Half-Bridge 2 IGBT 24ns,7ns 0.8V,2V 2A,3A