- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 78
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | ||
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|
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ON Semiconductor |
8,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | ||
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|
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ON Semiconductor |
8,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
- | - | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | ||
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|
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 21ns，18ns | 0.8V，1V | 3A，4A | ||
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|
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Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Cut Tape (CT) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 21ns，18ns | 0.8V，1V | 3A，4A | ||
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|
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Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 21ns，18ns | 0.8V，1V | 3A，4A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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Texas Instruments |
3,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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|
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Texas Instruments |
3,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
- | Automotive，AEC-Q100 | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC DRIVER MOSFET DUAL SYNC 8SOIC
|
Tube | - | 4.3 V ~ 6.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 17ns，12ns | - | 3A，3.2A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET DUAL SYNC 8WSON
|
Tape & Reel (TR) | - | 4.3 V ~ 6.8 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 17ns，12ns | - | 3A，3.2A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL SYNC 8WSON
|
Cut Tape (CT) | - | 4.3 V ~ 6.8 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 17ns，12ns | - | 3A，3.2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8-MLPD
|
Tape & Reel (TR) | - | 6.5 V ~ 7.5 V | 0°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 5ns，5ns | - | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET GATE DRIVER SON-8
|
Tape & Reel (TR) | - | 6.5 V ~ 7.5 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SON | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 5ns，5ns | - | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A |
