- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 20
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
8,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER VR12.5 8DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | ||
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|
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Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 21ns，18ns | 0.8V，1V | 3A，4A | ||
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Texas Instruments |
3,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Automotive，AEC-Q100 | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 30ns，8ns | 0.6V，2.65V | - | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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ON Semiconductor |
14,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER QFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 36-TFQFN Exposed Pad | 36-QFN (6x4) | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | - | |||
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|
ON Semiconductor |
9,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
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ON Semiconductor |
6,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
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ON Semiconductor |
3,894
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8SOIC
|
- | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 20ns，11ns | 0.8V，2V | - | |||
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ON Semiconductor |
29,266
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-SOIC
|
- | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.8V，2V | - | |||
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|
ON Semiconductor |
3,840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
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ON Semiconductor |
20,482
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
- | 4.6 V ~ 13.2 V | -20°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (3x3) | Inverting，Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 20ns，11ns | 0.8V，2V | - | |||
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ON Semiconductor |
5,501
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
- | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
|
|
ON Semiconductor |
2,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-SOIC
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - | |||
|
|
ON Semiconductor |
2,901
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
- | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (3x3) | Inverting，Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 20ns，11ns | 0.8V，2V | - | |||
|
|
ON Semiconductor |
1,332
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER BUCK DUAL QFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (3x3) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 1V，2V | - | |||
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|
ON Semiconductor |
1,368
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8SOIC
|
- | 4.6 V ~ 13.2 V | -20°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 20ns，11ns | 0.8V，2V | - | |||
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|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER VR11.1/AMD 8-SOIC
|
- | 10 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 1V，2V | - | |||
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|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8LFCSP
|
- | 4.15 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad，CSP | 8-LFCSP (3x3) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 20ns，20ns | 0.8V，2V | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC VR12 8-DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Non-Inverting | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 16ns，11ns | 0.7V，3.4V | - |
