Découvrez les produits 14
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Supplier Device Package Mounting Type Driven Configuration Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2125STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
Tape & Reel (TR) 0 V ~ 18 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125STRPBF
Infineon Technologies
2,466
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
Cut Tape (CT) 0 V ~ 18 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125STRPBF
Infineon Technologies
2,466
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
- 0 V ~ 18 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125SPBF
Infineon Technologies
2,077
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER LIMITING 1CHAN 16-SOIC
Tube 0 V ~ 18 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125PBF
Infineon Technologies
2,200
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER LIMITING 8-DIP
Tube 0 V ~ 18 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole High-Side IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IXZ631DF18N50
IXYS-RF
79
3 jours
-
MOQ: 1  MPQ: 1
500V 18A INTEGRATED POWER MOSFET
Tube 8 V ~ 18 V 10-SMD,Flat Lead 10-SMD Surface Mount Low-Side N-Channel MOSFET 3.4ns,1.65ns 0.8V,3.5V 95A,95A
IR2125
Infineon Technologies
Enquête
-
-
MOQ: 150  MPQ: 1
IC MOSFET DRIVER LIMITING 8-DIP
Tube 0 V ~ 18 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole High-Side IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125S
Infineon Technologies
Enquête
-
-
MOQ: 135  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
Tube 0 V ~ 18 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
Tape & Reel (TR) 0 V ~ 18 V 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 43ns,26ns 0.8V,2.2V 1.6A,3.3A
SI9910DY-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR ADAPTIVE PWR 8SOIC
Tape & Reel (TR) 10.8 V ~ 16.5 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side N-Channel MOSFET 50ns,35ns - 1A,1A
SI9910DY-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR ADAPTIVE PWR 8SOIC
Cut Tape (CT) 10.8 V ~ 16.5 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side N-Channel MOSFET 50ns,35ns - 1A,1A
SI9910DY-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR ADAPTIVE PWR 8SOIC
- 10.8 V ~ 16.5 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side N-Channel MOSFET 50ns,35ns - 1A,1A
SI9910DJ-E3
Vishay Siliconix
Enquête
-
-
MOQ: 500  MPQ: 1
IC MOSFET DVR ADAPTIVE PWR 8DIP
Tube 10.8 V ~ 16.5 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole High-Side N-Channel MOSFET 50ns,35ns - 1A,1A
SI9910DY-E3
Vishay Siliconix
Enquête
-
-
MOQ: 500  MPQ: 1
IC MOSFET DVR ADAPTIVE PWR 8SOIC
Bulk 10.8 V ~ 16.5 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side N-Channel MOSFET 50ns,35ns - 1A,1A