- Series:
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- Operating Temperature:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 5
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
- | -40°C ~ 125°C (TA) | - | Synchronous | High-Side or Low-Side | IGBT,N-Channel,P-Channel MOSFET | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
Automotive,AEC-Q100 | -40°C ~ 125°C (TA) | - | Synchronous | High-Side or Low-Side | IGBT,N-Channel,P-Channel MOSFET | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Infineon Technologies |
2,261
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 200ns,100ns | 0.8V,2.3V | 60mA,130mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOIC
|
- | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
1,026
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | IGBT,N-Channel MOSFET | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A |