Découvrez les produits 30
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD0507FN-7
Diodes Incorporated
2,991
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,13ns 1V,2.5V 1.5A,2.5A
DGD0507FN-7
Diodes Incorporated
2,991
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
- - 8 V ~ 14 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,13ns 1V,2.5V 1.5A,2.5A
UCC21222DR
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
4A/6A 2KVRMS DUAL CH ISO DR 8V
Tape & Reel (TR) - 3 V ~ 5.5 V -40°C ~ 125°C (TA) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Independent Half-Bridge IGBT,N-Channel MOSFET - 5ns,6ns 1.25V,1.6V 4A,6A
UCC21222QDQ1
Texas Instruments
Enquête
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-
MOQ: 1  MPQ: 1
AUTOMOTIVE 4-A,6-A,3.0-KV(RMS)
Tube Automotive,AEC-Q100 3 V ~ 5.5 V -40°C ~ 150°C (TA) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Independent Half-Bridge IGBT,N-Channel MOSFET - 5ns,6ns 1.25V,1.6V 4A,6A
UCC21222QDRQ1
Texas Instruments
Enquête
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-
MOQ: 2500  MPQ: 1
4A/6A 2KVRMS DUAL CH ISO DR 8V
Tape & Reel (TR) Automotive,AEC-Q100 3 V ~ 5.5 V -40°C ~ 150°C (TA) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Independent Half-Bridge IGBT,N-Channel MOSFET - 5ns,6ns 1.25V,1.6V 4A,6A
DGD0547FN-7
Diodes Incorporated
Enquête
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-
MOQ: 3000  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Tape & Reel (TR) - 5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 (type TH) Surface Mount Synchronous Half-Bridge N-Channel MOSFET 50V 16ns,12ns 0.8V,2.4V 1.5A,2.5A
IX4340N
IXYS Integrated Circuits Division
Enquête
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MOQ: 2000  MPQ: 1
5A,DUAL LOW-SIDE,NON-INVERTING
- - 5 V ~ 20 V -55°C ~ 150°C 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Low-Side N-Channel,P-Channel MOSFET - 7ns,7ns 0.8V,2.5V 5A,5A
IX4340NTR
IXYS Integrated Circuits Division
Enquête
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MOQ: 4000  MPQ: 1
5A,DUAL LOW-SIDE,NON-INVERTING
Tape & Reel (TR) - 5 V ~ 20 V -55°C ~ 150°C 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Low-Side N-Channel,P-Channel MOSFET - 7ns,7ns 0.8V,2.5V 5A,5A
IX4424G
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
3A DUAL NON-INVERTING LOW SIDE G
- - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-DIP Through Hole Independent Low-Side IGBT - 18ns,18ns 0.8V,3V 3A,3A
DGD05463M10-13
Diodes Incorporated
Enquête
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MOQ: 2500  MPQ: 1
HV GATE DRIVER MSOP-10 T&R 2.5K
Tape & Reel (TR) - 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP Surface Mount Synchronous Half-Bridge N-Channel MOSFET 50V 17ns,12ns 0.8V,2.4V 1.5A,2.5A