- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 27
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Tape & Reel (TR) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Cut Tape (CT) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
|
Texas Instruments |
148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tube | - | 3 V ~ 5.5 V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Independent | IGBT，N-Channel MOSFET | - | 5ns，6ns | 1.25V，1.6V | 4A，6A | ||
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|
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 16ns，18ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 16ns，18ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 16ns，18ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
1,524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
1,524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | - | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 17ns，12ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Synchronous | N-Channel MOSFET | 50V | 17ns，13ns | 1V，2.5V | 1.5A，2.5A |
