- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,473
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Analog Devices Inc. |
22,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
22,877
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
22,877
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
4,462
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
4,462
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
IXYS Integrated Circuits Division |
1,297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-SO
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
STMicroelectronics |
1,049
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8-SOIC
|
Tube | - | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.5V,3.6V | 400mA,650mA | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC PWR DRIVER 6SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns,3.5ns | 1.08V,1.93V | 4A,6A | ||||
Texas Instruments |
3,443
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR DRIVER 6SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns,3.5ns | 1.08V,1.93V | 4A,6A | ||||
Texas Instruments |
3,443
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR DRIVER 6SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns,3.5ns | 1.08V,1.93V | 4A,6A | ||||
STMicroelectronics |
1,858
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
Tube | - | 17V (Max) | -45°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.5V,3.6V | 400mA,650mA | ||||
IXYS Integrated Circuits Division |
2,092
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Texas Instruments |
3,966
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8-SOIC
|
Tube | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns,12ns | 0.8V,2.2V | 3A,5A | ||||
Infineon Technologies |
3,476
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns,15ns | 0.8V,2.7V | 1A,1A | ||||
Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Infineon Technologies |
3,044
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tube | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 300V | 65ns,25ns | - | 450mA,450mA |