- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 154
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
4,778
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL MOSFET DRIVER 8-DIP
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Tube | 4.75 V ~ 5.25 V，4.75 V ~ 24 V | 0°C ~ 70°C (TA) | 8-PDIP | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | 500mA，500mA | ||
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Renesas Electronics America Inc. |
409
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8DIP
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Tube | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-PDIP | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Texas Instruments |
14,018
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRIVER 8-DIP
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Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Texas Instruments |
7,532
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRIVER 8-DIP
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Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Maxim Integrated |
351
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Texas Instruments |
3,959
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Infineon Technologies |
2,599
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Maxim Integrated |
1,523
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Texas Instruments |
3,826
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC INVERTING MOSFET DRVR 8-DIP
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Tube | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
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STMicroelectronics |
2,107
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE HV 8-DIP
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Tube | 17V (Max) | -45°C ~ 125°C (TJ) | 8-DIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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Infineon Technologies |
3,000
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Renesas Electronics America Inc. |
1,372
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC PWR MOSFET DVR DUAL HS 8DIP
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
150
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-DIP
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Tube | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Texas Instruments |
527
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Maxim Integrated |
322
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRV SGL 6A HS 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Renesas Electronics America Inc. |
3,142
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-PDIP | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Microchip Technology |
839
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER HI/LOSIDE 8-DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-PDIP | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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IXYS Integrated Circuits Division |
633
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Texas Instruments |
282
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC PERIPHERAL DRVR DUAL HV 8-DIP
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Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-PDIP | Independent | Low-Side | 2 | - | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
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Infineon Technologies |
41
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.8V，2.7V | 1A，1A |
