- Voltage - Supply：
-
- Operating Temperature：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 10
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC DRIVER HIGH/LOW SID 14DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 175 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DVR MONO HI/LO 14DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
|
|
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14-DIP
|
10 V ~ 15 V | 0°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14-DIP
|
10 V ~ 15 V | -40°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 400 MPQ: 1
|
IC DRVR HALF BRIDGE 600MA 14-PDI
|
10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA |
