- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 140
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DRIVER HI/LO 600V 10DFN
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Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
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ON Semiconductor |
2,882
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
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ON Semiconductor |
2,882
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
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SYNCH RECT BUCK MOSFET
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | - | Synchronous | N-Channel MOSFET | - | - | 1.3V，1.9V | -，4A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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SYNCH RECT BUCK MOSFET
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Tube | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | - | Synchronous | N-Channel MOSFET | - | - | 1.3V，1.9V | -，4A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC MOSFET DVR STP-DN SYNC 10DFN
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Tape & Reel (TR) | 4.5 V ~ 7.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | N-Channel MOSFET | 30V | 5.3ns，4.8ns | 1.7V，3.4V | 3.2A，3.2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DVR STP-DN SYNC 10DFN
|
Tape & Reel (TR) | 4.5 V ~ 7.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | N-Channel MOSFET | 30V | 5.3ns，4.8ns | 1.7V，3.4V | 3.2A，3.2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DVR STP-DN SYNC 10DFN
|
Tape & Reel (TR) | 4.5 V ~ 7.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | N-Channel MOSFET | 30V | 5.3ns，4.8ns | 1.7V，3.4V | 3.2A，3.2A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DRIVER DUAL 12V 10-DFN
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Tape & Reel (TR) | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | N-Channel MOSFET | 30V | 16ns，11ns | 0.8V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRIVER VR11.1/AMD 10DFN
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Tape & Reel (TR) | 10 V ~ 13.2 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | N-Channel MOSFET | 35V | 16ns，11ns | 1V，2V | - | |||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC MOSFET DVR STP-DN SYNC 10DFN
|
Tape & Reel (TR) | 4.5 V ~ 7.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | N-Channel MOSFET | 30V | 5.3ns，4.8ns | 1.7V，3.4V | 3.2A，3.2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 5V 10DFN
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA |
