- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 10
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | Synchronous | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A | ||
|
|
|
Renesas Electronics America Inc. |
10,503
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SYNC BUCK 10DFN
|
10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | Synchronous | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
15,806
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 10-DFN
|
6.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | Synchronous | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Infineon Technologies |
2,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | Synchronous | N-Channel MOSFET | - | - | - | 3A，4A | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH CURR 10DFN
|
5 V ~ 12 V | 0°C ~ 125°C (TJ) | Synchronous | N-Channel MOSFET | 41V | - | 0.8V，2V | 2A，- | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 10-DFN
|
10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | Synchronous | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Synchronous | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Synchronous | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
|
|
ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
10 V ~ 20 V | -40°C ~ 125°C (TJ) | Independent | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
10 V ~ 20 V | -40°C ~ 125°C (TJ) | Independent | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA |
