- Packaging：
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- Voltage - Supply：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 5
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Tape & Reel (TR) | 15 V ~ 20 V | Half-Bridge | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Cut Tape (CT) | 15 V ~ 20 V | Half-Bridge | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
- | 15 V ~ 20 V | Half-Bridge | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Tube | 15 V ~ 20 V | Half-Bridge | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 27 MPQ: 1
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IC MOSFET DRVR DUAL 15A 28-SOIC
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Tube | 8 V ~ 30 V | Low-Side | N-Channel，P-Channel MOSFET | - | 4.5ns，3.5ns | 0.8V，3.5V | 15A，15A |
