PMIC - Pilotes de porte - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Input Type：

Channel Type：

Driven Configuration：

Number of Drivers：

Gate Type：

High Side Voltage - Max (Bootstrap)：

Rise / Fall Time (Typ)：

Logic Voltage - VIL, VIH：

Current - Peak Output (Source, Sink)：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)
	IRS2330STRPBF	Infineon Technologies	Enquête	-	-	IC DVR 3-PHASE BRIDGE 28SOIC MOQ: 1000 MPQ: 1	IC DVR 3-PHASE BRIDGE 28SOIC	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Inverting	3-Phase	Half-Bridge	6	IGBT，N-Channel MOSFET	600V	80ns，35ns	0.8V，2.2V	250mA，500mA
	IRS2332DSTRPBF	Infineon Technologies	Enquête	-	-	IC DVR 3-PHASE BRIDGE 28SOIC MOQ: 1000 MPQ: 1	IC DVR 3-PHASE BRIDGE 28SOIC	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Inverting	3-Phase	Half-Bridge	6	IGBT，N-Channel MOSFET	600V	80ns，35ns	0.8V，2.2V	250mA，500mA
	IRS2332STRPBF	Infineon Technologies	Enquête	-	-	IC DVR 3-PHASE BRIDGE 28SOIC MOQ: 1000 MPQ: 1	IC DVR 3-PHASE BRIDGE 28SOIC	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Inverting	3-Phase	Half-Bridge	6	IGBT，N-Channel MOSFET	600V	80ns，35ns	0.8V，2.2V	250mA，500mA
	AUIRS2336S	Infineon Technologies	Enquête	-	-	IC GATE DRIVER HV 3PHASE 28SOIC MOQ: 100 MPQ: 1	IC GATE DRIVER HV 3PHASE 28SOIC	Tube	Automotive，AEC-Q100	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	3-Phase	Half-Bridge	6	IGBT，N-Channel，P-Channel MOSFET	600V	125ns，50ns	0.8V，2.5V	200mA，350mA
	AUIRS20302S	Infineon Technologies	Enquête	-	-	IC GATE DRIVE AUTOMOTIVE 28SOIC MOQ: 125 MPQ: 1	IC GATE DRIVE AUTOMOTIVE 28SOIC	Tube	Automotive，AEC-Q100	24 V ~ 150 V	-40°C ~ 125°C (TJ)	Non-Inverting	3-Phase	Half-Bridge	6	N-Channel MOSFET	200V	100ns，35ns	0.7V，2.5V	200mA，350mA
	MIC4609YWM-TR	Microchip Technology	Enquête	-	-	IC GATE DRVR HALF-BRIDGE 28SOIC MOQ: 1000 MPQ: 1	IC GATE DRVR HALF-BRIDGE 28SOIC	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 125°C (TJ)	Non-Inverting	3-Phase	Half-Bridge	6	IGBT，N-Channel，P-Channel MOSFET	600V	20ns，20ns	0.8V，2.2V	1A，1A
	MIC4609YWM-TR	Microchip Technology	275	3 jours	-	IC GATE DRVR HALF-BRIDGE 28SOIC MOQ: 1 MPQ: 1	IC GATE DRVR HALF-BRIDGE 28SOIC	Cut Tape (CT)	-	10 V ~ 20 V	-40°C ~ 125°C (TJ)	Non-Inverting	3-Phase	Half-Bridge	6	IGBT，N-Channel，P-Channel MOSFET	600V	20ns，20ns	0.8V，2.2V	1A，1A
	MIC4609YWM-TR	Microchip Technology	275	3 jours	-	IC GATE DRVR HALF-BRIDGE 28SOIC MOQ: 1 MPQ: 1	IC GATE DRVR HALF-BRIDGE 28SOIC	-	-	10 V ~ 20 V	-40°C ~ 125°C (TJ)	Non-Inverting	3-Phase	Half-Bridge	6	IGBT，N-Channel，P-Channel MOSFET	600V	20ns，20ns	0.8V，2.2V	1A，1A

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