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Packaging：
Voltage - Supply：
Input Type：
Channel Type：
Gate Type：
High Side Voltage - Max (Bootstrap)：
Rise / Fall Time (Typ)：
Logic Voltage - VIL, VIH：
Current - Peak Output (Source, Sink)：
Conditions sélectionnées:
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Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Input Type Channel Type Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD0503FN-7
DGD0503FN-7
 Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV 10-WDFN
 Tape & Reel (TR) 10 V ~ 20 V Non-Inverting Independent IGBT，N-Channel MOSFET 100V 70ns，35ns 0.8V，2.5V 290mA，600mA
DGD0503FN-7
DGD0503FN-7
 Diodes Incorporated
2,647
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
 Cut Tape (CT) 10 V ~ 20 V Non-Inverting Independent IGBT，N-Channel MOSFET 100V 70ns，35ns 0.8V，2.5V 290mA，600mA
DGD0503FN-7
DGD0503FN-7
 Diodes Incorporated
2,647
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
 - 10 V ~ 20 V Non-Inverting Independent IGBT，N-Channel MOSFET 100V 70ns，35ns 0.8V，2.5V 290mA，600mA
DGD0506FN-7
DGD0506FN-7
 Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
 Tape & Reel (TR) 8 V ~ 14 V CMOS/TTL Synchronous N-Channel MOSFET 50V 17ns，12ns 1V，2.5V 1.5A，2.5A
DGD0506FN-7
DGD0506FN-7
 Diodes Incorporated
1,524
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
 Cut Tape (CT) 8 V ~ 14 V CMOS/TTL Synchronous N-Channel MOSFET 50V 17ns，12ns 1V，2.5V 1.5A，2.5A
DGD0506FN-7
DGD0506FN-7
 Diodes Incorporated
1,524
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
 - 8 V ~ 14 V CMOS/TTL Synchronous N-Channel MOSFET 50V 17ns，12ns 1V，2.5V 1.5A，2.5A
DGD0507FN-7
DGD0507FN-7
 Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
 Tape & Reel (TR) 8 V ~ 14 V CMOS/TTL Synchronous N-Channel MOSFET 50V 17ns，13ns 1V，2.5V 1.5A，2.5A
DGD0507FN-7
DGD0507FN-7
 Diodes Incorporated
2,991
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
 Cut Tape (CT) 8 V ~ 14 V CMOS/TTL Synchronous N-Channel MOSFET 50V 17ns，13ns 1V，2.5V 1.5A，2.5A
DGD0507FN-7
DGD0507FN-7
 Diodes Incorporated
2,991
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
 - 8 V ~ 14 V CMOS/TTL Synchronous N-Channel MOSFET 50V 17ns，13ns 1V，2.5V 1.5A，2.5A
DGD0504FN-7
DGD0504FN-7
 Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV 10-WDFN
 Tape & Reel (TR) 10 V ~ 20 V Non-Inverting Synchronous IGBT，N-Channel MOSFET 100V 70ns，35ns 0.8V，2.5V 290mA，600mA
DGD0504FN-7
DGD0504FN-7
 Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
 Cut Tape (CT) 10 V ~ 20 V Non-Inverting Synchronous IGBT，N-Channel MOSFET 100V 70ns，35ns 0.8V，2.5V 290mA，600mA
DGD0504FN-7
DGD0504FN-7
 Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
 - 10 V ~ 20 V Non-Inverting Synchronous IGBT，N-Channel MOSFET 100V 70ns，35ns 0.8V，2.5V 290mA，600mA
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