- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 11
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DVR ULT FAST 14A 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC HIGH SIDE DRIVER 8DIP
|
9 V ~ 12 V | -40°C ~ 150°C (TJ) | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 0.8V，3V | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8 PIN DIP INVERTING
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8 PIN DIP NON INVERTING
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRIVER GATE IGBT/MOSFET 8DIP
|
12 V ~ 26 V | -40°C ~ 150°C (TJ) | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 2800 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 8-DIP
|
25V (Max) | -40°C ~ 150°C (TJ) | Non-Inverting | High-Side | N-Channel MOSFET | - | - | - | - | ||
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2800 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 8-DIP
|
25V (Max) | -40°C ~ 150°C (TJ) | Non-Inverting | High-Side | N-Channel MOSFET | - | - | - | - | ||
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|
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STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-DIP
|
12 V ~ 26 V | -40°C ~ 150°C (TJ) | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A |
