- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 38
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
Enquête
|
- |
-
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MOQ: 56 MPQ: 1
|
IC CMOS DRVR W/BOOST 1.5A 8-CDIP
|
- | 4 V ~ 6 V | -55°C ~ 125°C (TA) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | 33ns,27ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC CMOS DRVR W/BOOST 1.5A 8-CDIP
|
- | 4 V ~ 6 V | -55°C ~ 125°C (TA) | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | 33ns,27ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 23ns,25ns | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8CDIP
|
- | 7 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 23ns,25ns | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 19ns,19ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 30ns,30ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -25°C ~ 85°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 30ns,30ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8-CDIP
|
- | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,33ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8-CDIP
|
- | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,33ns | 1.5A,1.5A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.5A,1.5A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 25ns,25ns | 6A,6A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.5A,1.5A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 2A,2A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 2A,2A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRIVER MOSFET COTS
|
Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,25ns | 1.5A,1.5A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.5A,1.5A |