- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 15
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL OD 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 40ns，40ns (Max) | 1.5A，1.5A | ||
|
|
Microchip Technology |
56
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | |||
|
|
Microchip Technology |
72
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -25°C ~ 85°C (TA) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 30ns，30ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
58
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 19ns，19ns | 1.5A，1.5A | |||
|
|
Maxim Integrated |
8
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET COTS
|
Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
20
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 30ns，30ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8CDIP
|
- | 4.5 V ~ 18 V | -25°C ~ 150°C (TJ) | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 23ns，25ns | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC CMOS DRVR W/BOOST 1.5A 8-CDIP
|
- | 4 V ~ 6 V | -55°C ~ 125°C (TA) | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | 33ns，27ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8CDIP
|
- | 7 V ~ 18 V | -55°C ~ 150°C (TJ) | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 23ns，25ns | 6A，6A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8-CDIP
|
- | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，33ns | 1.5A，1.5A | |||
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | |||
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | |||
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR COTS
|
Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A |
