- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 94
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
Enquête
|
- |
-
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MOQ: 240 MPQ: 1
|
IC COMPLEMNT SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,25ns | 0.8V,2V | 500mA,1A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC COMP SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,25ns | 0.8V,2V | 500mA,1A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC DVR DUAL HIGH SIDE 16-SOIC
|
Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 135 MPQ: 1
|
IC DVR HISIDE DUAL LOSIDE 16SOIC
|
Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 135 MPQ: 1
|
IC DVR HISIDE DUAL LOSIDE 16SOIC
|
Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC DVR LOW SIDE/DUAL HI 16-SOIC
|
Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,20ns | 0.8V,3.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 135 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16-SOIC
|
Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,20ns | 0.8V,3.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.8V,2.5V | 3.5A,3.5A | ||||
Linear Technology/Analog Devices |
435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH16SOIC
|
Tube | - | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns,60ns | 0.8V,2V | 1.5A,1.5A |