Supplier Device Package:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 94
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UC3714DPG4
Texas Instruments
Enquête
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MOQ: 240  MPQ: 1
IC COMPLEMNT SW FET DRVR 16-SOIC
Tube - 7 V ~ 20 V 0°C ~ 150°C (TJ) 16-SOIC Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V 500mA,1A
UC3715DPG4
Texas Instruments
Enquête
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-
MOQ: 240  MPQ: 1
IC COMP SW FET DRVR 16-SOIC
Tube - 7 V ~ 20 V 0°C ~ 150°C (TJ) 16-SOIC Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V 500mA,1A
IRS21853STRPBF
Infineon Technologies
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V 2A,2A
IRS21853STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
Cut Tape (CT) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V 2A,2A
IRS21853STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
- - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V 2A,2A
IRS21952STRPBF
Infineon Technologies
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Cut Tape (CT) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
- - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Cut Tape (CT) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
- - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21853SPBF
Infineon Technologies
Enquête
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-
MOQ: 225  MPQ: 1
IC DVR DUAL HIGH SIDE 16-SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V 2A,2A
IRS21953SPBF
Infineon Technologies
Enquête
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-
MOQ: 135  MPQ: 1
IC DVR HISIDE DUAL LOSIDE 16SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952SPBF
Infineon Technologies
Enquête
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-
MOQ: 135  MPQ: 1
IC DVR HISIDE DUAL LOSIDE 16SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21858SPBF
Infineon Technologies
Enquête
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-
MOQ: 225  MPQ: 1
IC DVR LOW SIDE/DUAL HI 16-SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 60ns,20ns 0.8V,3.5V 290mA,600mA
IRS21962SPBF
Infineon Technologies
Enquête
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MOQ: 135  MPQ: 1
IC DVR HI SIDE DUAL 600V 16-SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21858STRPBF
Infineon Technologies
Enquête
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-
MOQ: 2500  MPQ: 1
IC DVR HI SIDE DUAL 600V 16SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 60ns,20ns 0.8V,3.5V 290mA,600mA
IRS21962STRPBF
Infineon Technologies
Enquête
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-
MOQ: 2500  MPQ: 1
IC DVR HI SIDE DUAL 600V 16SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
AUIRS2191S
Infineon Technologies
Enquête
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MOQ: 180  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.8V,2.5V 3.5A,3.5A
LT1336CS#PBF
Linear Technology/Analog Devices
435
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 1/2BRDG NCH16SOIC
Tube - 10 V ~ 15 V 0°C ~ 125°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 60V 130ns,60ns 0.8V,2V 1.5A,1.5A