Découvrez les produits 24
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
L6390DTR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
Tape & Reel (TR) - 12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 75ns,35ns 1.1V,1.9V 290mA,430mA
L6390DTR
STMicroelectronics
3,711
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
Cut Tape (CT) - 12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 75ns,35ns 1.1V,1.9V 290mA,430mA
L6390DTR
STMicroelectronics
3,711
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
- - 12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 75ns,35ns 1.1V,1.9V 290mA,430mA
L6390D
STMicroelectronics
543
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HV HI/LOW SIDE 16SO
Tube - 12.5 V ~ 20 V -40°C ~ 150°C (TJ) 16-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 75ns,35ns 1.1V,1.9V 290mA,430mA
HR2000GS-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE 16SOIC
Tape & Reel (TR) - 10 V ~ 12 V -40°C ~ 150°C (TJ) 16-SOIC - Synchronous Half-Bridge 2 N-Channel MOSFET - - -
AUIRS2191STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 15ns,15ns 0.8V,2.5V 3.5A,3.5A
HR2000GS
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 50  MPQ: 1
IC GATE DRVR HALF BRIDGE 16SOIC
Tube - 10 V ~ 12 V -40°C ~ 150°C (TJ) 16-SOIC - Synchronous Half-Bridge 2 N-Channel MOSFET - - -
IRS21853STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 15ns,15ns 0.6V,3.5V 2A,2A
IRS21853STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
Cut Tape (CT) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 15ns,15ns 0.6V,3.5V 2A,2A
IRS21853STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
- - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 15ns,15ns 0.6V,3.5V 2A,2A
IRS21952STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Cut Tape (CT) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
- - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Cut Tape (CT) - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
- - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21853SPBF
Infineon Technologies
Enquête
-
-
MOQ: 225  MPQ: 1
IC DVR DUAL HIGH SIDE 16-SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 15ns,15ns 0.6V,3.5V 2A,2A
IRS21953SPBF
Infineon Technologies
Enquête
-
-
MOQ: 135  MPQ: 1
IC DVR HISIDE DUAL LOSIDE 16SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952SPBF
Infineon Technologies
Enquête
-
-
MOQ: 135  MPQ: 1
IC DVR HISIDE DUAL LOSIDE 16SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21858SPBF
Infineon Technologies
Enquête
-
-
MOQ: 225  MPQ: 1
IC DVR LOW SIDE/DUAL HI 16-SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 60ns,20ns 0.8V,3.5V 290mA,600mA